tip33 TIP33A tip33b tip33c maximum ratings: (t c =25c) symbol tip34 tip34a tip34b tip34c units collector-base voltage v cbo 40 60 80 100 v collector-emitter voltage v ceo 40 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 10 a peak collector current i cm 15 a continuous base current i b 3.0 a power dissipation (t a =25c) p d 3.5 w power dissipation p d 80 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 35.7 c/w thermal resistance jc 1.56 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =30v (tip33, TIP33A, tip34, tip34a) 0.7 ma i ceo v ce =60v (tip33b, tip33c, tip34b, tip34c) 0.7 ma i ces v ce =rated v ceo 0.4 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma (tip33, tip34) 40 v bv ceo i c =30ma (TIP33A, tip34a) 60 v bv ceo i c =30ma (tip33b, tip34b) 80 v bv ceo i c =30ma (tip33c, tip34c) 100 v v ce(sat) i c =3.0a, i b =0.3a 1.0 v v ce(sat) i c =10a, i b =2.5a 4.0 v v be(on) v ce =4.0v, i c =3.0a 1.6 v v be(on) v ce =4.0v, i c =10a 3.0 v h fe v ce =4.0v, i c =1.0a 40 h fe v ce =4.0v, i c =3.0a 20 100 h fe v ce =10v, i c =0.5a, f=1.0khz 20 f t v ce =10v, i c =0.5a, f=1.0mhz 3.0 mhz tip33 TIP33A tip33b tip33c npn tip34 tip34a tip34b tip34c pnp complementary silicon power transistors description: the central semiconductor tip33 and tip34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. marking: full part number to-218 transistor case r1 (18-july 2013) www.centralsemi.com
tip33 TIP33A tip33b tip33c npn tip34 tip34a tip34b tip34c pnp complementary silicon power transistors to-218 transistor case - mechanical outline lead code: 1) base 2) collector 3) emitter tab) collector marking: full part number www.centralsemi.com r1 (18-july 2013)
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